High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Micromachines
سال: 2019
ISSN: 2072-666X
DOI: 10.3390/mi10020077